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| SPP18P06P G SIPMOS(R) Power-Transistor Features * P-Channel * Enhancement mode * Avalanche rated * dv /dt rated * 175C operating temperature * Pb-free lead finishing; RoHS compliant Product Summary V DS R DS(on),max ID -60 0.13 -18.6 V A PG-TO220-3 Type Package Tape and reel information 50pcs / tube Marking 18P06P Lead free Yes SPP18P06PG PG-TO220-3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 C T A=100 C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 C I D=18.7 A, R GS=25 -18.7 -13.2 -74.8 151 mJ A Unit Avalanche energy, periodic limited by E AR Tjmax Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 dv /dt V GS P tot T j, T stg T A=25 C1) I D=18.7 A, V DS=48 V, di /dt =-200 A/s, T j,max=175 C 8 -6 20 81.1 "-55 ... +175" kV/s V W C 260 C 55/150/56 Rev1.8 page 1 2009-04-14 SPP18P06P G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: R thJC Values typ. max. Unit - - 1.85 K/W R thJA - - 62 R thJA minimal footprint - - 62 K/W 6 cm2 cooling area1) - - 40 Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 A V GS(th) V DS=V GS, I D=1000 A V DS=-60 V, V GS=0 V, T j=25 C V DS=-60 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-10 V, I D=-13.2 A |V DS|>2|I D|R DS(on)max, I D=-13.2 A -60 -2.1 2.7 -4 V Zero gate voltage drain current I DSS - -0.1 -1 A - -10 -10 102 -100 -100 130 nA m Transconductance g fs 5 10 - S 1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev1.8 page 2 2009-04-14 SPP18P06P G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=30 V, I F=|I S|, di F/dt =100 A/s T A=25 C V GS=0 V, I F=-18.6 A, T j=25 C -0.99 70 139 18.60 -74.8 -1.33 105 208 V ns nC A Q gs Q gd Qg V plateau V DD=-48 V, I D=18.6 A, V GS=0 to -10 V -4.1 -11 -21 -5.94 -5.5 -17 -28 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-30 V, V GS=10 V, I D=-13.2 A, R G=2.7 V GS=0 V, V DS=-25 V, f =1 MHz 690 230 95 12.0 5.8 25 11 860 290 120 18.0 8.7 37 16.5 ns pF Values typ. max. Unit Rev1.8 page 3 2009-04-14 SPP18P06P G 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); |V GS|10 V 90 80 70 60 20 15 P tot [W] -I D [A] 50 40 30 20 10 0 0 40 80 120 160 10 5 0 0 40 80 120 160 T A [C] T A [C] 3 Safe operating area I D=f(V DS); T A=25 C ; D =0 parameter: t p 10 s 100 s limited by on-state resistance 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 101 1) 101 1 ms 10 ms 100 DC 0.5 Z thJS [K/W] 0.2 0.1 0.05 -I D [A] 10 0 10-1 10-1 10 0.02 -5 0.01 10 -4 10-3 10-2 10-1 100 101 102 single pulse 10-2 0.1 1 10 100 -V DS [V] t p [s] Rev1.8 page 4 2009-04-14 SPP18P06P G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 40 400 35 -20 V -10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 30 -7 V 320 -4 V -4.5 V -5 V -5.5 V -6 V R DS(on) [m] 25 -I D [A] 240 -7 V 20 -6 V 15 -5.5 V 160 10 -5 V -10 V 80 5 -4.5 V -4 V -20 V 0 0 2 4 6 8 0 0 5 10 15 20 25 30 35 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 8 8 Typ. forward transconductance g fs=f(I D); T j=25 C 14 12 6 10 -I D [A] g fs [S] 125 C 25 C 4 8 6 2 4 2 0 0 1 2 3 4 5 0 0 5 10 15 20 25 30 -V GS [V] -I D [A] Rev1.8 page 5 2009-04-14 SPP18P06P G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-13.2 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-1000 A 4 350 3.5 300 3 250 max. R DS(on) [m] 2.5 -V GS(th) [V] typ. 200 98 % 2 min. 150 typ. 1.5 100 1 50 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 25 C, typ 103 Ciss 101 150 C, typ C [pF] Coss 102 I F [A] 100 150 C, 98% 25 C, 98% Crss 101 0 5 10 15 20 25 10-1 0 0.5 1 1.5 2 2.5 3 -V DS [V] -V SD [V] Rev1.8 page 6 2009-04-14 SPP18P06P G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 10 2 14 Typ. gate charge V GS=f(Q gate); I D=-18.6 A pulsed parameter: V DD 16 14 12 25 C 12 V 30 V 48 V 10 -I AV [A] V GS [V] 101 125 C 100 C 8 6 4 2 0 100 10 0 0 10 1 5 10 15 20 25 30 t AV [s] 10 2 10 3 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 A 16 Gate charge waveforms 70 V GS Qg 65 -V BR(DSS) [V] 60 V g s(th) 55 Q g(th) Q sw Q g ate 50 -60 -20 20 60 100 140 180 Q gs Q gd T j [C] Rev1.8 page 7 2009-04-14 SPP18P06P G Package Outline: PG-TO220-3 Rev1.8 page 8 2009-04-14 SPP18P06P G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev1.8 page 9 2009-04-14 |
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